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Friday, July 24, 2020 | History

3 edition of Proceedings 2002 IEEE Hong Kong Electron Devices Meeting: 22 June 2002 found in the catalog.

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting: 22 June 2002

The City University of Hong Kong

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Published by Ieee .
Written in English

    Subjects:
  • Management of real estate, property & plant,
  • Real Estate - General,
  • Business & Economics,
  • Business/Economics

  • The Physical Object
    FormatPaperback
    Number of Pages121
    ID Numbers
    Open LibraryOL8083550M
    ISBN 100780374290
    ISBN 109780780374294

    Carlo H. Séquin: Publications University of Basel 1 E. Baldinger, M. Lenzlinger, and C. H. Séquin: "Bestrahlung von MOS Feld-effekt Transitoren mit Co60,'' Zeitschrift für angewandte Mathematik und Physik (ZAMP) 17, ().   Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University, , Aoba Aramaki, Aobaku, Sendai, Miyagi , JapanCited by: 6.

    Chee Wei Wong, Wei-Chuan Shih, Yong Bae Jeon, George Barbastathis, and S. G. Kim, "Tunable Optical MEMS Devices for Intelligent Communication Networks", CIRP Design Seminar, Hong Kong, May , D.W. Prather, J.N. Mait, and M.S. Mirotznik, 'Boundary Element Method for Analysis of Diffractive Optical Elements', in Proc. ARL Sensors and Electron Devices Symposium , D.W. Prather, M.S. Mirotznik, and J.N. Mait, 'Rigorous modeling of finite, aperiodic diffractive optical elements,' Annual Meeting of the Society for Industrial and.

    R. Ramachandran and A. Pham, Development of an organic wafer-level packaging platform for highly integrated RF transceivers, in IEEE International Microwave Symposium (IMS) Digest, Seattle, WA, June , pp. Hong Kong. Contributed by the "Overview and Outlook of Three-Dimensional Integrated Circuit Packaging, Three-Dimensional Si Integration, and Three-Dimensional Integrated Circuit Integration." ASME. J. Electron. ,” IEEE International Electron Devices Meeting (IEDM ), San Francisco, CACited by:


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Proceedings 2002 IEEE Hong Kong Electron Devices Meeting: 22 June 2002 Download PDF EPUB FB2

Get this from a library. IEEE Hong Kong Electron Devices Meeting: proceedings: 22 June,the City University of Hong Kong. [IEEE Electron Devices Society.; City University of Hong Kong.;]. "The 9th Hong Kong Electron Devices Meeting (HKEDM) was held in the City University of Hong Kong on 22nd June "--Page iii.

Description: ix, pages: illustrations ; 29 cm: Other Titles: Proceedings IEEE Hong Kong Electron Devices Meeting Hong Kong Electron Devices Meeting: Responsibility.

In particular, he is a co-author for the book: Guide to State-of-the-Art Electron Devices which was jointly published by Wiley and IEEE for celebrating the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society.

IEEE and its members inspire a global community to innovate for a better tomorrow through highly cited publications, conferences, technology standards, and professional and educational activities.

IEEE is the trusted “voice” for engineering, computing, and technology information around the globe. ExCom/Elected Members-at-Large. The EDS Executive Committee (ExCom) is an 11 member body comprised of the society's officers (seated Presidents, Treasurer, Secretary), Standing Committee Vice Presidents, and the EDS Operations Director.

The Executive Committee provides the Board of Governors with strategic vision and long-term planning for the Society, oversees the finances and operations of. IEEE Meetings, Conferences & Events is a dedicated partner made up of event industry experts driven to shape innovative and high quality events.

IEEE MCE specializes in event management including registration, audience development and program design; as well as sponsorship, publications and financial management for more than 1, annual events.

Contact info Email: @ Address: colonel Glenn Dayton, Ohio Tel: () Links: WSU Home. Kinget, S. Chatterjee, and Y. Tsividis, "Ultra low voltage analog design techniques for nanoscale CMOS technologies," Proceedings, IEEE International Conference on Electronic Devices and Solid-State Circuits, Hong Kong, pp.December A SONOS memory cell is formed from a standard polysilicon N-channel MOSFET transistor with the addition of a small sliver of silicon nitride inserted inside the transistor's gate oxide.

The sliver of nitride is non-conductive but contains a large number of charge trapping sites able to hold an electrostatic charge. The nitride layer is electrically isolated from the surrounding transistor.

Dec. Talk, "Fano resonance photonic crystal nanomembranes for silicon photonics", IEEE Nanotechnology Council/ IEEE Photonics Society and Electron Devices Society ACT Chapter, Australian National University, Canberra, Australia. Senesky, D.G., and A.P.

Pisano, “Aluminum Nitride as a Masking Material for the Plasma Etching of Silicon Carbide Structures,” In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems, IEEE MEMS, Hong Kong, Location: Stanford, CA, Hons.

() University of Hong Kong, M.S. () State University of New York, Stony Brook, and Ph.D. () Lehigh University. Biography: H.-S. Philip Wong is the Willard R. and Inez Kerr Bell Professor in the School of Engineering. He joined Stanford University as Professor of Electrical Engineering in September, Conference Papers / Presentations.

Conference Papers. Dimitris Ioannou, Chen Shi, Huixian Ye, Hui Wang and Qiliang Li, "Cross-reactive graphene and ZnO chemical vapor sensors for precise discrimination," 17th International Meeting on Chemical Sensors - IMCSpp.

DOI: /IMCS/AR Feasibility of nm device manufacture by nm optical lithography: an initial assessment. Electron Devices Meeting, Proceedings. IEEE Hong Kong June IEEE. Selected Publications by M. Saif Islam Hilal Cansizoglu et al., “A New Paradigm in High Speed and High Efficiency Silicon Photodiodes for Communication–Part I and Part II“, IEEE Transaction in Electronic Devices, Gao, Cansizoglu et al., “Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes“.

Chomnawang and J.-B. Lee, “On-chip dome-shape spiral micro inductor for high frequency applications“, in Proceedings of the SPIE Smart Structures and Materials Smart Electronics, MEMS, and Nanotechnology, SPIE vol.pp.

50~57, San Diego, CA, March [26] C. Favi and E. Charbon, “Techniques for Fully Integrated Intra-/Inter-chip Optical Communication”, IEEE Design Automation Conference, June [27] H Based on CMOS Single Photon Detectors”, IEEE International Electron Devices Meeting (IEDM Design Automation Conference, pp.

Hong Kong, Jan. Accepting candidate nominations through Monday, Ma at 9AM EDT. Registration Now Open for VR. The IEEE Conference on Virtual Reality and 3D User Interfaces (IEEE VR) is the premier event for VR and AR.

What technologies should you watch in the new year. Get our free report on the Top 12 Tech Trends for — plus six exclusive. IEEE IEDM (Intl. Electron Devices Meeting), San Francisco CA, Dec BEAM (Career Services) Future Faculty Seminar, Stanford CA, Oct 2Dfun (2D Functional MX2-Graphene Heterostructures) Workshop, IMEC, Leuven Belgium, Oct Scanning Holography Microscopy for 3-D Imaging, Department of Electrical and Electronic Engineering, IEEE EMBS Hong Kong Chapter, The University of Hong Kong, Hong Kong, 7/20/ Fourier Optics-a tutorial, Department of Electrical and Electronic Engineering, City University of Hong Kong, June.

Abstract. In this chapter, a flip chip is defined (Lau in Flip Chip Technologies. McGraw-Hill, New York, []; Lau in Low Cost Flip Chip -Hill, New York, []; Lau et al. in Electronic -Hill, New York, []; Lau in Electronic -Hill, New York, []) as a chip attached to the pads of a substrate or another chip with various Cited by: 1.J.

Kolodzey, Ralph T. Troeger, Pengcheng Lv, and Sangcheol Kim, "Terahertz emitting devices based on dopant transitions in silicon," IEEE LEOS First IEEE International Conference on Group IV Photonics, Hong Kong, 29 Sept.

Hong Kong, República Popular da China: IEEE/City University of Hong Kong,vol. 1, pp. [17] de GRAAUW, A.; COPETTI, C.; WEEKAMP, W. A new thin film passive integration technology for miniaturisation of mobile phone front end modules: integration of a dual-band power amplifier, switch and diplexer for GSM.

In: IEEE MTT-S.